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| NTD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. Features http://onsemi.com * * * * * * * * * * * Pb-Free Packages are Available Ultra-Low RDS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatures High Avalanche Energy Specified ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0 Power Supplies Inductive Loads PWM Motor Controls Replaces MTD20N03L in many Applications 20 A, 30 V, RDS(on) = 27 mW N-Channel D G S Typical Applications MARKING DIAGRAMS 4 Drain Value 30 30 "20 "24 20 16 60 74 0.6 1.75 -55 to 150 288 Adc Apk W W/C W C mJ 1 2 4 AYWW 20 N3L 123 Gate Drain Source 20N3L A Y WW = Device Code = Assembly Location = Year = Work Week DPAK-3 CASE 369D STYLE 2 Unit Vdc Vdc Vdc 12 3 2 1 3 Drain Gate Source 4 Drain AYWW 20 N3L 4 DPAK CASE 369C STYLE 2 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 MW) Gate-to-Source Voltage - Continuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25_C - Continuous @ TA = 100_C - Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25_C Derate above 25C Total Power Dissipation @ TC = 25C (Note 1) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH, IL(pk) = 24 A, VDS = 34 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient - Junction-to-Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD TJ, Tstg EAS 3 C/W RqJC RqJA RqJA TL 1.67 100 71.4 260 C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using the minimum recommended pad size and repetitive rating; pulse width limited by maximum junction temperature. (c) Semiconductor Components Industries, LLC, 2004 1 August, 2004 - Rev. 2 Publication Order Number: NTD20N03L27/D NTD20N03L27 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ =150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 2) (VGS = 4.0 Vdc, ID = 10 Adc) (VGS = 5.0 Vdc, ID = 10 Adc) Static Drain-to-Source On-Voltage (Note 2) (VGS = 5.0 Vdc, ID = 20 Adc) (VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150C) Forward Transconductance (Note 2) (VDS = 5.0 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Ga e C a ge (VDS = 48 Vdc, ID = 15 Adc, Vdc Adc VGS = 10 Vdc) (Note 2) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 2) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time e e se eco e y e (IS =15 Adc, VGS = 0 Vdc, 15 dlS/dt = 100 A/ms) (Note 2) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. trr ta tb QRR VSD - - - - - - 1.0 0.9 23 13 10 0.017 1.15 - - - - - mC ns s Vdc (VDD = 20 Vdc, ID = 20 Adc, Vd Ad VGS = 5.0 Vdc, 5 0 Vdc RG = 9.1 W) (Note 2) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 17 137 38 31 13.8 2.8 6.6 25 160 45 40 18.9 - - nC ns (VDS = 25 Vdc, VGS = 0 Vdc, Vdc Vdc 1.0 f = 1 0 MHz) Ciss Coss Crss - - - 1005 271 87 1260 420 112 pF VGS(th) 1.0 - RDS(on) - - VDS(on) - - gFS - 0.48 0.40 21 0.54 - - mhos 28 23 31 27 Vdc 1.6 5.0 2.0 - Vdc mV/C mW V(BR)DSS 30 - IDSS - - IGSS - - - - 10 100 100 nAdc - 43 - - Vdc mV/C mAdc Symbol Min Typ Max Unit ORDERING INFORMATION Device NTD20N03L27 NTD20N03L27G NTD20N03L27-1 NTD20N03L27-1G NTD20N03L27T4 NTD20N03L27T4G Package DPAK DPAK (Pb-Free) DPAK-3 DPAK (Pb-Free) DPAK DPAK (Pb-Free) Shipping 75 Units/Rail 75 Units/Rail 75 Units/Rail 75 Units/Rail 2500 Tape & Reel 2500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD20N03L27 40 -ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 35 30 25 20 15 VGS = 3 V 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ = 25C VGS = 2.5 V VGS = 10 V VGS = 4 V VGS = 8 V VGS = 4.5 V VGS = 5 V VGS = 3.5 V VGS = 6 V 40 36 32 28 24 20 16 12 8 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 TJ = 100C TJ = 25C VDS > = 10 V TJ = -55C -VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 2 5 8 12 15 18 22 25 28 32 35 38 ID, DRAIN CURRENT (AMPS) TJ = 25C TJ = -55C VGS = 5 V TJ = 100C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.03 TJ = 25C 0.025 VGS = 5 V 0.02 VGS = 10 V 0.015 0.01 0 4 8 12 16 20 24 28 32 36 40 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance vs. Drain Current and Temperature 1.6 ID = 10 A VGS = 5 V 1.4 -IDSS, LEAKAGE (nA) 100 1000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 125C 1.2 1 TJ = 100C 10 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 0 3 6 9 12 15 18 21 24 27 30 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTD20N03L27 VGS, GATE-TO-SOURCE VOLTAGE (V) 2500 VGS - VDS C, CAPACITANCE (pF) 200 12 10 8 VGS 6 4 2 0 Q1 Q2 Q 1500 Ciss 1000 Coss Crss 0 10 8 6 4 202 4 6 8 10 12 14 16 18 20 23 25 500 ID = 20 A TJ = 25C 0 2 4 6 8 10 12 14 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (AMPS) 20 18 16 14 12 10 8 6 4 2 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS = 0 V TJ = 25C t, TIME (ns) 100 tr tf td(off) 10 td(on) VDS = 20 V ID = 20 A VGS = 5.0 V TJ = 25C 1 10 RG, GATE RESISTANCE (W) 100 1 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 350 Figure 10. Diode Forward Voltage vs. Current ID = 24 A 300 250 200 150 100 50 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTD20N03L27 PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE C E DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTD20N03L27 PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- B V R 4 Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTD20N03L27/D |
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